Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures

Radha Ranganathan; Jann P. Kaminski; Wei Jian Li; Jiping Cheng; Bruce D. McCombe

doi:10.1117/12.60466

1 July 1992 Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures

Radha Ranganathan, Jann P. Kaminski, Wei Jian Li, Jiping Cheng, Bruce D. McCombe

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60466
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We have performed far infrared cyclotron resonance absorption saturation experiments of both electrons (GaAs/AlGaAs MQW structure) and holes (InGaAs/GaAs <111> strained- layer superlattice) with the Free Electron Laser at UC Santa Barbara, Calif. The Landau level lifetime is found to be laser power dependent at high powers, and is longer for electrons than for holes. Reasons are discussed. Proper analysis of the transmission data is crucial for strongly absorbing multi-layer structures to obtain meaningful results. Limitation of the 3-level model used to determine the lifetimes are also discussed.

Citation Download Citation

Radha Ranganathan, Jann P. Kaminski, Wei Jian Li, Jiping Cheng, and Bruce D. McCombe "Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60466

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