Hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities: femtoseconds to nanoseconds

Wayne S. Pelouch; Randy J. Ellingson; Peter E. Powers; Chung Liang Tang; Dean H. Levi; Arthur J. Nozik

doi:10.1117/12.137691

21 October 1992 Hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities: femtoseconds to nanoseconds

Wayne S. Pelouch, Randy J. Ellingson, Peter E. Powers, Chung Liang Tang, Dean H. Levi, Arthur J. Nozik

Author Affiliations +

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137691
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

An investigation of hot carrier relaxation in GaAs/Al_xGa_1-xAs multiple quantum wells and bulk GaAs in the high carrier density limit is presented. Two techniques have been employed: luminescence upconversion with < 80 fs temporal resolution has been used to cover the range from 100 fs to 100 ps, and time-correlated single-photon counting to cover the range from 100 ps to 2 ns. Electron temperatures as a function of time were determined from the slope of the high energy tail of the time-resolved photoluminescence spectra. Our results show that hot electron cooling rates in the quantum wells begin to become significantly slower than that in the bulk when the photogenerated carrier density is above a critical value of approximately 2 X 10¹⁸ cm^-3; the difference in cooling rates increases rapidly with increasing carrier density. The time constant characterizing the power loss of hot carriers is also determined and discussed. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates between quasi-2D and 3D systems.

Citation Download Citation

Wayne S. Pelouch, Randy J. Ellingson, Peter E. Powers, Chung Liang Tang, Dean H. Levi, and Arthur J. Nozik "Hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities: femtoseconds to nanoseconds", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137691

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available