Carbon doping of III-V compounds by atomic-layer epitaxy

Kimberly G. Reid; A. F. Myers; J. Ramdani; N. A. El-Masry; Salah M. Bedair

doi:10.1117/12.137653

2 September 1992 Carbon doping of III-V compounds by atomic-layer epitaxy

Kimberly G. Reid, A. F. Myers, J. Ramdani, N. A. El-Masry, Salah M. Bedair

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137653
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Carbon is a very suitable acceptor in III - V compounds for device applications requiring thin layers with very low resistivity due to its low diffusion coefficient. We have used a modified, atmospheric pressure MOCVD reactor to grow carbon doped GaAs films by atomic layer epitaxy (ALE) using trimethylgallium (TMGa) as the carbon source. The hole density was controllable from high resistivity to 10²⁰ cm^-3. These results were then used as the basis for the study of carbon doping of InGaAs in a layer-by-layer technique using TMGa, triethylindium (TEIn) and arsine (AsH₃).

Citation Download Citation

Kimberly G. Reid, A. F. Myers, J. Ramdani, N. A. El-Masry, and Salah M. Bedair "Carbon doping of III-V compounds by atomic-layer epitaxy", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137653

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