Single-wafer high-pressure oxidation

Charles A. Boitnott; David R. Craven

doi:10.1117/12.56622

1 January 1992 Single-wafer high-pressure oxidation

Charles A. Boitnott, David R. Craven

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56622
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Cluster tool demands on oxidation process for device fabrication leads to requirement of single wafer high pressure hot process tool. A joint development project between GaSonics/IPC and Texas Instruments has produced a working tool capable of delivering high quality oxides and excellent reflow performance to meet the future needs of the industry.

Citation Download Citation

Charles A. Boitnott and David R. Craven "Single-wafer high-pressure oxidation", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56622

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