Wideband impedance-matched integrated optoelectronic transmitter

D. Yap

doi:10.1117/12.2321805

1 December 1992 Wideband impedance-matched integrated optoelectronic transmitter

D. Yap

Proceedings Volume 1582, Integrated Optoelectronics for Communication and Processing; (1992) https://doi.org/10.1117/12.2321805
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

A GaAs/GaAlAsintegrated optoelectronic transmitter has been developed for wideband operation at 1 to4 GHz. This transmitter combines a GaAS/GaA1AS single-quantum-well (SQW) ridge-waveguide laserwith a GaAs MESFET driver circuit. The single stage driver circuit has an rf gain of 9 dB and is impedance matched to both the low resistance laserload and the 50 W microwave input by using reactive MMIC components. This design results in a nearly flat frequency response in the band of interest A combination of both laser and MMIC fabrication processes has been used to realize the transmitter in the vertically integrated MOVPE-grown material.

Citation Download Citation

D. Yap "Wideband impedance-matched integrated optoelectronic transmitter", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321805

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