Paper
1 February 1992 Chemical spray deposition of CuGaS2 thin films
K. Subbaramaiah, V. Sundara Raja
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57037
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
CuGaS2 thin films have been prepared by the spray pyrolysis method. These films have been found to be single phase and chalcopyrite in structure. The lattice parameters a and c as well as the optical band gap of these films have been determined. The films exhibited p-type conductivity.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Subbaramaiah and V. Sundara Raja "Chemical spray deposition of CuGaS2 thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57037
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Thin films

Thin film deposition

Chalcopyrites

Crystals

Diffraction

Copper

Temperature metrology

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