Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM

John G. Maltabes; Katherine C. Norris; Dean Writer

doi:10.1117/12.44792

1 July 1991 Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM

John G. Maltabes, Katherine C. Norris, Dean Writer

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44792
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

This paper describes the computer simulation results of 0.5 micrometers lithography for a 16 Mb DRAM. The model demonstrates, via aerial profiles, the increased focus latitude for deep- ultraviolet (DUV) lithography as compared to i-line lithography. The result translates into a larger process window for manufacturing DRAMs using DUV lithography. The model also isolated an imaging problem at one of the critical levels. Two probable solutions were simulated and then lithographically confirmed.

Citation Download Citation

John G. Maltabes, Katherine C. Norris, and Dean Writer "Computer simulation of 0.5-micrometer lithography for a 16-megabit DRAM", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44792

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