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1 March 1991 Exciton-polariton photoluminescence in ultrapure GaAs
Yuri V. Zhilyaev, Victor V. Rossin, Tatiana V. Rossin, V. V. Travnikov
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24302
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The low temperature photoluminescence of ultra pure GaAs grown by vapour phase epitaxy was investigated .The free exciton luminescence spectnim of GaAs is described in the framework of the polari ton theory . An inf luence of the excitation density and temperature on the polariton luminescence 1 ineshape was studied . Temperature transi tion from the case of the strong exci ton-photon coupi ing to the case of the weak ex citon-photon coupl ing was observed . An opportunity of use of the polariton luinines cence 1 me shape analysis for characterizat ion of pure GaAs crysta 1 s is demoristra ted.
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Yuri V. Zhilyaev, Victor V. Rossin, Tatiana V. Rossin, and V. V. Travnikov "Exciton-polariton photoluminescence in ultrapure GaAs", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24302
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KEYWORDS
Gallium arsenide
Luminescence
Polaritons
Excitons
Ions
Shape analysis
Vapor phase epitaxy
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