Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures

Peter Guttmann; Gentsho V. Danev; Erintche M. Spassova; Sergey V. Babin

doi:10.1117/12.24327

1 March 1991 Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures

Peter Guttmann, Gentsho V. Danev, Erintche M. Spassova, Sergey V. Babin

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24327
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The changes in the chemical and optical properties of the thin (8001200 A) layers of As2S3 after exposure with photons (1 to 40 J/cm2) electrons (3. 2. 1O to 1. 28 102 C/cm2) or soft Xradiation (0. 1 to 1 1 1 . 0 J/cm2) are studied. The structural changes occurring after exposure lead to changes in the alkaline stability of the exposed regions. The optimum exposure doses for As 25 3 layers are determined allowing their use for ebeam and xray lithographic purposes. The high stability of the layers to a great number of acid etchers used in microelectronic technologies and the stability in TUE conditions in oxygen medium make the layers accomplishing microlithographic tasks.

Citation Download Citation

Peter Guttmann, Gentsho V. Danev, Erintche M. Spassova, and Sergey V. Babin "Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24327

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