Paper
20 November 2024 Room temperature 96x96 InGaAs/InP SPAD array for SWIR imaging
P. Rustige, P. Runge, M. Schell
Author Affiliations +
Abstract
We present a 96x96 InGaAs/InP single photon avalanche diode (SPAD) array for detection at 1550nm wavelength. The pixels have a diameter of 15μm and a 25μm pitch, resulting in a fill factor of 28.3%. The dark count rates (DCR) of the array were measured for a subset of 6x24 pixels. The DCR vs. photon detection efficiency of a representative SPAD and the breakdown voltage statistics for a subset of 6x96 pixels were recorded at room temperature. The DCR of the measured subset has a median value of very low 87kcps. At corresponding excess bias, we measured a photon detection efficiency (PDE) of 15%. The breakdown voltage of the 6x96 subset has a median value of 62.2V with a standard deviation of only 72mV. The results indicate a strong candidate for a SWIR imaging sensor in low-level-light applications.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Rustige, P. Runge, and M. Schell "Room temperature 96x96 InGaAs/InP SPAD array for SWIR imaging", Proc. SPIE 13192, Sensors, Systems, and Next-Generation Satellites XXVIII, 131920V (20 November 2024); https://doi.org/10.1117/12.3033437
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KEYWORDS
Single photon avalanche diodes

Imaging arrays

Short wave infrared radiation

Detector arrays

LIDAR

Indium gallium arsenide

Optical sensors

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