Noise characteristics of cryo-SiCMOS multiplexed FGA readouts below 30 K

Hong-Mook Kim

doi:10.1117/12.21750

1 September 1990 Noise characteristics of cryo-SiCMOS multiplexed FGA readouts below 30 K

Hong-Mook Kim

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21750
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

This paper explores the noise characteristics of a 20 x 64 element cryo-SiCMOS multiplexed FPA readout of the switched MOSFET type over the temperature range 8-30 K. Both subtractive double sampling and correlated double sampling techniques were used to probe the multiplexer's output waveform during static and dynamic operation. The rms noise was observed to be a weak, decreasing function of temperature over the ranges 8-19 K and 24-30 K, while the apparent noise was excessively high in the region 19-24 K, owing to a device instability that is attributed to a fundamental property of silicon-based cryo-MOSFETs.

Citation Download Citation

Hong-Mook Kim "Noise characteristics of cryo-SiCMOS multiplexed FGA readouts below 30 K", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21750

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