For several years, LETI and Lynred (within DEFIR common laboratory) has been working on a new version of its P/N structure. This new generation (NG) process flow is a complete overhaul of the MCT P/N fabrication, focusing on lowering process induced defects in the narrow gap absorbing material. It is therefore specifically designed to optimise second order figures of merit such as stability, BSFR, RTS pixels. Until now, this technology has been intensively focused on MWIR band for high operating operation [ ][ ][ ], with 7.5µm pixel pitches, for tactical applications. This work results in very interesting performance FPA demonstrations for the next generation of MCT MWr detectors at 130K and even at 150K. We now investigate the possibility to adapt this NG flow to longer wavelength such as LW (9.3µm@80K). First arrays exhibit almost no distribution tails, and measured dark currents remain very low down to very low temperatures (below 100e/s at 40K). This paper also intend to discuss the potentiality of this NG structure for the VLWIR (15µm@65K) band intended to address future space applications for earth observations.
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