Geiger-mode avalanche photodiodes (GmAPDs), also referred to as single-photon avalanche diodes (SPADs), are designed and fabricated by our group at MIT Lincoln Laboratory. When bonded to a readout integrated circuit (ROIC), they form a system that can timestamp single photon arrival with sub nanosecond precision. When the pixels are armed in Geiger mode, they detect photons by creating an avalanche of electron-hole pairs in the detector material that can be detected by a ROIC. This paper explores a phenomenon known as afterpulsing, which can manifest itself as an increase in detector noise, or dark count rate. Afterpulsing occurs due to defects in the device structure that cause charge carriers from a previous avalanche to get trapped within the impurities of the device. If the extra charge carriers aren’t provided enough time to depopulate from the traps, the re-biasing of the individual device back into Geiger-mode operation has a time-based, statistical impact on the likelihood that the trapped carrier causes a secondary avalanche to occur upon re-arm. We investigate afterpulsing using a MIT Lincoln Laboratory designed 32x32 asynchronous readout integrated circuit bump-bonded to a InGaAs/InP 1550nm GmAPD array. This paper reports on how afterpulsing is affected by changing operating temperature, applied overbias voltage, and/or individual pixel holdoff time. Additionally, methods of determining afterpulsing with on-ROIC pixel interarrival data are discussed and best operating parameters to minimize afterpulsing for our GmAPD and ROIC are presented.
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