Post treatment of plasma enhanced atomic layer deposited MoS2 via ultra short pulse laser to increase the crystallinity

Malte J. M. J. Becher; Leander Willeke; Claudia Bock; Andreas Ostendorf

doi:10.1117/12.3016372

20 June 2024 Post treatment of plasma enhanced atomic layer deposited MoS₂ via ultra short pulse laser to increase the crystallinity

Malte J. M. J. Becher, Leander Willeke, Claudia Bock, Andreas Ostendorf

Author Affiliations +

Proceedings Volume 13005, Laser + Photonics for Advanced Manufacturing; 130050I (2024) https://doi.org/10.1117/12.3016372
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

2D molybdenum disulfide (MoS2) is a promising material for the application in the flexible electronic, where large, uniform, crystalline films on flexible substrates are desired. The utilization of low-temperature plasma-enhanced atomic layer deposition (PEALD) facilitates the production of large-area, uniform, polycrystalline MoS2 films on temperature-sensitive substrates. However, for next-generation electronics, the crystallite size does not fulfill requirements. In order to enhance the degree of crystallinity conventional high temperature post treatments of the whole sample, which are not compatible with flexible substrates, needs to be avoided. In this study, a method for increasing the crystallinity of polycrystalline MoS2 films on SiO₂/Si and glass substrate deposited by plasma enhanced ALD processed with femtosecond laser pulses (λ = 1030 nm, t_p = 200 fs), in a "cold" annealing process is presented. The laser fluence range varies from f_min = 3.0 mJ cm⁻² to f_max = 30.00 m J⁻² with scanning speeds from v_scan,min = 1 mm s⁻¹ to v_scan,max = 1000 mm s⁻¹, at a repetition rate of f^rep = 2000 kHz. The crystallization and the influence of the processing parameters on the film topography are analyzed in detail by Raman spectroscopy and scanning electron microscopy. Finally, the influence of the laser processing on the film resistivity is investigated.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Malte J. M. J. Becher, Leander Willeke, Claudia Bock, and Andreas Ostendorf "Post treatment of plasma enhanced atomic layer deposited MoS₂ via ultra short pulse laser to increase the crystallinity", Proc. SPIE 13005, Laser + Photonics for Advanced Manufacturing, 130050I (20 June 2024); https://doi.org/10.1117/12.3016372

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