Poster
6 June 2024 New design of electrically pumped GeSnOI laser integrated on a Si-photonics platform
Author Affiliations +
Conference Poster
Abstract
Advancements in semiconductor materials, particularly within Group IV, are crucial to meet the demand for efficient and adaptable laser sources. Germanium-tin (GeSn) alloys have emerged as promising candidates, facilitating full monolithic integration into silicon photonics. Progress in optically pumped GeSn lasers is remarkable, but electrically injected ones face challenges due to low index contrast to effectively confine the optical mode. We propose an electrically pumped laser design based on GeSnOI (GeSn On Insulator) scheme. Modal analysis was performed at 2500 nm wavelength using finite element method, optimizing electromagnetic wave confinement, and mitigating direct electrical contact deposition on the active zone. Simulation results indicated that the most effective fabrication approach involves bonding with another silicon substrate using SiN dielectric layer as cladding, thus taking advantage of high optical index contrast. This advancement heralds the potential for room temperature operation of electrically pumped lasers.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Maria Alejandra Mendez, Maksym Gromovyi, Omar Concepción, Dan Buca, and Moustafa El-Kurdi "New design of electrically pumped GeSnOI laser integrated on a Si-photonics platform", Proc. SPIE PC13002, Semiconductor Lasers and Laser Dynamics XI, PC130020K (6 June 2024); https://doi.org/10.1117/12.3029453
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KEYWORDS
Design

Alloys

CMOS technology

Laser development

Silicon

Semiconductor materials

Silicon photonics

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