Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection

T. Blain; G. Basta; C. H. Tan; J. S. Ng

doi:10.1117/12.3022598

20 June 2024 Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection

T. Blain, G. Basta, C. H. Tan, J. S. Ng

Proceedings Volume 12999, Optical Sensing and Detection VIII; 129991U (2024) https://doi.org/10.1117/12.3022598
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

Sensing of weak photon fluxes in the short to mid-wave infrared is important for a variety of applications such as optical communication systems, light detection and ranging (LiDAR) and remote gas sensing. For the most demanding applications, avalanche photodiodes (APDs) are regularly employed due to the enhanced sensitivity afforded by their internal avalanche gain. Indium Arsenide (InAs) is a material which exhibits near ideal avalanche multiplication properties and is capable of detecting infrared radiation up to 3 μm at 77 K. Due to exclusive multiplication of electrons, it exhibits incredibly low excess noise factors below 2, regardless of the magnitude of avalanche gain. Furthermore, unlike most APD technologies, its bandwidth is not limited by its avalanche gain, allowing it to operate at high speeds with high gains. Using our recently developed planar process, we report InAs avalanche photodiodes which exhibit high gains in excess of 100 and external quantum efficiencies at 1550 nm of 56 %. Our liquid nitrogen cooled detectors are combined with a low noise current amplifier and the performance of the system is analyzed. Detection of weak 1550 nm laser pulses corresponding to <70 photons per pulse is demonstrated. The detector's noise current is shown to be background limited, hence, detection of lower optical powers could be achieved through further set-up optimization.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

T. Blain, G. Basta, C. H. Tan, and J. S. Ng "Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection", Proc. SPIE 12999, Optical Sensing and Detection VIII, 129991U (20 June 2024); https://doi.org/10.1117/12.3022598

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available