Paper
18 December 2023 Formation of nano-cone structures on silicon via maskless reactive ion etching
Jiacheng Lin, Hao Liu, Chen Jiang, Qi Wang, Kai Liu, Xiaomin Ren
Author Affiliations +
Proceedings Volume 12961, AOPC 2023: Nanophotonics ; 129610C (2023) https://doi.org/10.1117/12.3008000
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China
Abstract
We report a maskless reactive ion etching (RIE) method that employs O2, CHF3 and SF6&O2 gas plasma sequentially to generate nano-cones structures on silicon substrates with good uniformity. In this method, nano-cones are made under carefully-controlled conditions that restrict their width and height to 60 nm and 82 nm, respectively. According to the formation trend of nano-cones under different plasma conditions, the contributing mechanism is discussed. With the multiple effects of etching time, chamber pressure and self-bias voltage, the height, angle and density of nano-cones will be varied within a certain range. Given these variations, a nano-cone structure with good uniformity was generated using the following parameters: etching time of 300 s, chamber pressure of 40 mtorr, self-bias voltage of 75 W, and a SF6&O2 flow ratio of 75 sccm: 75 sccm. The experiment in this report demonstrates a promising way to fabricate silicon-based nano-cone structures for photonic and optoelectronic applications, with advantages of the controllability and compatibility of its dry-etching process.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Jiacheng Lin, Hao Liu, Chen Jiang, Qi Wang, Kai Liu, and Xiaomin Ren "Formation of nano-cone structures on silicon via maskless reactive ion etching", Proc. SPIE 12961, AOPC 2023: Nanophotonics , 129610C (18 December 2023); https://doi.org/10.1117/12.3008000
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KEYWORDS
Etching

Silicon

Reactive ion etching

Oxides

Plasma

Scanning electron microscopy

Vacuum chambers

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