Optimization and far-field characteristic of metal/dielectric coated circular semiconductor nano-lasers

Qiaoge Sun; Chucai Guo

doi:10.1117/12.3008095

18 December 2023 Optimization and far-field characteristic of metal/dielectric coated circular semiconductor nano-lasers

Qiaoge Sun, Chucai Guo

Author Affiliations +

Proceedings Volume 12959, AOPC 2023: Laser Technology and Applications; and Optoelectronic Devices and Integration; 1295919 (2023) https://doi.org/10.1117/12.3008095
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China

Abstract

Metal/dielectric coated semiconductor lasers with sub-wavelength dimensions have shown promising applications in photonics integrated circuits and on-chip optical interconnects. In this study, we optimize the structure of circular InAlGaAs/InP nanocavities by employing the finite-difference time-domain (FDTD) numerical simulation method. It was found that, the quality factors of monopole modes in a cavity with radius of 250 nm can be over 1000 after structure optimization. Furthermore, the far-field characteristics of resonant modes in the cavities with different radius were studied. For the monopole modes, the divergent angle of far-field distribution decreases along with the increase of longitudinal order. Meanwhile, the cavity radius has a significant effect on the far-field distribution for monopole modes. For the dipole modes, the far-field distribution concentrates on a small angle range which is much better than that of monopole modes, and the effect of cavity radius on the far-field distribution is small. The research results of this study provide valuable insights for the design and fabrication of efficient and high-performance nano-lasers.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Qiaoge Sun and Chucai Guo "Optimization and far-field characteristic of metal/dielectric coated circular semiconductor nano-lasers", Proc. SPIE 12959, AOPC 2023: Laser Technology and Applications; and Optoelectronic Devices and Integration, 1295919 (18 December 2023); https://doi.org/10.1117/12.3008095

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconductor lasers

Silica

Semiconductors

Absorption

Finite-difference time-domain method

Metals

Numerical simulations

Show All Keywords

Keywords/Phrases

Search In:

Publication Years