Maximillian W. Mueller,1,2 Terry McAfee,3 Patrick Naulleau,3 Dahyun Oh,4 Oleg Kostko3
1San Jose State Univ. (United States) 2Lawrence Berkeley National Lab. (United States) 3The Ctr. for X-Ray Optics, Lawrence Berkeley National Lab. (United States) 4San José State Univ. (United States)
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EUV photon-generated primary and secondary electrons, produced by a cascade of inelastic scattering events, have a wide range of energies and drive EUV patterning by initiating chemical transformations. To study electron-induced chemistry we exposed photoresist films to an electron beam varied from 20 to 80 eV. Chemical transformations were characterized using a residual gas analyzer, FTIR, and ellipsometry. Total outgassing was determined for key fragments and compared to film thickness changes via ellipsometry and FTIR bond structure changes. Estimates of electron penetration depth and reaction efficiency (bonds broken per electron) will be presented.
Maximillian W. Mueller,Terry McAfee,Patrick Naulleau,Dahyun Oh, andOleg Kostko
"Outgassing, bond structure, and thickness in polymers under electron exposure", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570C (10 April 2024); https://doi.org/10.1117/12.3010981
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Maximillian W. Mueller, Terry McAfee, Patrick Naulleau, Dahyun Oh, Oleg Kostko, "Outgassing, bond structure, and thickness in polymers under electron exposure," Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570C (10 April 2024); https://doi.org/10.1117/12.3010981