Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda; Wataru Shibayama; Rikimaru Sakamoto; Syuhei Shigaki; Yuki Furukawa; Taiki Saijo; Kodai Kato; Seonggil Heo; Hyo Seon Suh

doi:10.1117/12.3010078

10 April 2024 Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, Hyo Seon Suh

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295702 (2024) https://doi.org/10.1117/12.3010078
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Metal Oxide Resist (MOR) is one of the promising resists for High-NA EUV lithography. However since the pattern pitch is getting smaller, pattern collapse issue has been getting sever problem. We developed Organic Dry Development Rinse (O-DDR) process as extension for wet development to prevent the pattern collapse issue without using any special equipment. O-DDR process has been demonstrated the capability to prevent MOR pattern collapse and expand process window with pitch 32nm pillar and pitch 28nm line and space in EUV lithography . In this paper, we introduce O-DDR process concept and performance for MOR patterning.

Conference Presentation

Citation Download Citation

Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, and Hyo Seon Suh "Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295702 (10 April 2024); https://doi.org/10.1117/12.3010078

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