Modeling edge placement error performance of EUV and DSA multipatterning processes

Chris A. Mack; Gurpreet Singh; Florian Gstrein

doi:10.1117/12.3011711

10 April 2024 Modeling edge placement error performance of EUV and DSA multipatterning processes

Chris A. Mack, Gurpreet Singh, Florian Gstrein

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 129530B (2024) https://doi.org/10.1117/12.3011711
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Background: Patterning of very tight pitches suffers from stochastic variations that can impact yield. Different patterning processes with lower stochastic variations are preferred when those lower variations have a quantifiable benefit in terms of device yield or performance. Aim: Here two different process flows, a traditional EUV patterning flow and one involving directed self-assembly (DSA) rectification, will be compared to determine the differences expected in device failure rates, with the failure mechanism being the shorting of a via hole to the wrong feature. Approach: These device failure rates will be based on a rigorous edge placement error (EPE) model taking stochastic variations into account, leading to predictions of device failure and the definition of an overlay process window (OPW): the range of overlay errors that keeps the device failure rate above a minimum specified value. Results: For the patterning of 18 nm pitch line/space patterns contacted with 12 nm wide vias, the EUV process flow produces a 2.5 nm OPW, while the DSA rectification process expands that OPW significantly to 4.0 nm. Conclusions: Using a rigorous EPE modeling approach fed by accurate stochastics measurements, the significant benefits of the DSA rectification process have been quantified.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Chris A. Mack, Gurpreet Singh, and Florian Gstrein "Modeling edge placement error performance of EUV and DSA multipatterning processes", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530B (10 April 2024); https://doi.org/10.1117/12.3011711

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