Molecular beam epitaxy: a path to novel high Tc superconductors?

Darrell G. Schlom; J. N. Eckstein; Ivan Bozovic; Zongjian Chen; A. F. Marshall; K. E. von Dessonneck; James S. Harris Jr.

doi:10.1117/12.20831

1 October 1990 Molecular beam epitaxy: a path to novel high Tc superconductors?

Darrell G. Schlom, J. N. Eckstein, Ivan Bozovic, Zongjian Chen, A. F. Marshall, K. E. von Dessonneck, James S. Harris Jr.

Author Affiliations +

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20831
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O films is reported. The advantage of using ozone rather than molecular oxygen for the growth of cuprate superconductors by molecular beam epitaxy (MBE) is discussed. Molecular beams of the constituent metals were shuttered on an atomic layer-by-layer basis to grow Bi2Sr2Ca1CuO phases for n=1 to 5, and ordered superlattices of these phases. Using these techniques an as-grown superconducting film with ]nset near 100 K and T (p=O) of 84 K was achieved. The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE to grow custom layered combinations of Bi2Sr2Ca..1CuO layers. This shuttered MBE growth technique seems quite capable of synthesizing artificially layered epitaxial structures consisting of layers of oxides that are superconducting, non-superconducting metals, semiconducting, or insulating, with control of layer thickness and abruptness on an atomic scale.

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Darrell G. Schlom, J. N. Eckstein, Ivan Bozovic, Zongjian Chen, A. F. Marshall, K. E. von Dessonneck, and James S. Harris Jr. "Molecular beam epitaxy: a path to novel high Tc superconductors?", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20831

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