Paper
1 October 1990 Nanostructures under quantum-Hall conditions
Vipin Srivastava
Author Affiliations +
Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20786
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
It is suggested that 2D-electron-gas-systems, 500 nm wide and 100 ji m long, subjected to the conditions under which the quantum Hall-effect is observed, can behave like a 3osephson tunnel junction in that a phase-driven alternating current should exist between the two edge currents flowing parallel and anti-parallel to the longitudinal direction. Recent experimental results supporting this idea in low as well as in high frequency limits are discussed. The quenching of the Hall effect observed at low magnetic fields (around B=O) is shown to be the low frequency manifestation of this effect. Some newer experimental results at high values of B -- in the quantum-Hall regime -- show evidence of quantum interference arising out of the mixing of the edge currents by the high frequency phasedriven alternating currents.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vipin Srivastava "Nanostructures under quantum-Hall conditions", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20786
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KEYWORDS
Nanostructures

Semiconductors

Magnetism

Information technology

Physics

Quantum physics

Resistance

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