X-ray mask patterning technologies

P. E. Mauger; A. R. Shimkunas

doi:10.1117/12.3011901

20 December 2023 X-ray mask patterning technologies

P. E. Mauger, A. R. Shimkunas

Proceedings Volume 12809, Bay Area Chrome Users Society Symposium 1985; 128090F (2023) https://doi.org/10.1117/12.3011901
Event: 5th Annual BACUS Symposium, 1985, Sunnyvale, CA, United States

Abstract

One o-f the key -features in the development of X-ray lithography as a viable alternative to optical techniques is the technology of X-ray masks. Shifting from optical to X-ray sources requires significant changes in maskmaking techniques. Glass substrates can no longer be used, but must be replaced by thin membrane structures. The membrane is X-ray transparent and is used to support a metallic absorber pattern. Boron nitride is the most commonly used membrane material to date. Chrome is not an adequate absorber and must be replaced by higher atomic number materials, such as gold. Much thicker absorber patterns, in the range of 0.5 to 1.0 microns are required. Since all X-ray lithography systems are IX proximity printers, processes for absorber patterning must have resolution in the submicron range. Two techniques for gold absorber patterning have been developed and are currently in use at Micronix Corporation. Subtractive patterning is accomplished by sputter etching the gold absorber layer using a tantalum etch mask. This technique produces sloped sidewalls, which limit the resolution achievable. An improved process, using gold electroplating into a resist stencil, has been developed. This additive technique has been shown to produce absorber patterns with vertical sidewalls for dimensions as small as 0.5 microns.

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P. E. Mauger and A. R. Shimkunas "X-ray mask patterning technologies", Proc. SPIE 12809, Bay Area Chrome Users Society Symposium 1985, 128090F (20 December 2023); https://doi.org/10.1117/12.3011901

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KEYWORDS

Gold

Etching

X-rays

Tantalum

Optical lithography

Boron nitride

X-ray technology

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