Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga2O3 thin films for opto-electronic application

Madhuri Mishra; Rajib Saha; Sangita Bhowmick; Subhananda Chakrabarti

doi:10.1117/12.2679102

3 October 2023 Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga₂O₃ thin films for opto-electronic application

Madhuri Mishra, Rajib Saha, Sangita Bhowmick, Subhananda Chakrabarti

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Proceedings Volume 12653, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX; 126530K (2023) https://doi.org/10.1117/12.2679102
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

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Abstract

Ga₂O³ has established to be a promising material for deep UV and UV optoelectronics and sensing applications. However, a major drawback of Ga₂O³ thin film based optoelectronic devices is the existence of native point defects which can result in the creation of sub-bandgap absorption, carrier scattering centres, and leakage channels and becomes an obstruction to their efficient device applications. To overcome this high temperature annealing processes are required which not only leads to a rise in the thermal budget but also put many fabrication and technological bounds in device fabrication. Therefore, in this work we report room temperature ultraviolet-ozone (UVO) annealing as a facile and cost-effective method which can control defect states and improve the optical efficiency of Ga₂O³ thin film. The Ga₂O³ thin films were deposited by radio frequency (RF) sputtering technique on p-Si at room temperature. The grown films were subsequently subjected to UV-Ozone (UVO) annealing for 30, 50, 70, and 90 min at room temperature. The atomic force microscopy result shows the impacts of UV-Ozone (UVO) annealing time on the film roughness which further associated with reduced oxygen vacancies (Vo) concentration. Optimum time of UVO annealing for Ga₂O³ thin films was estimated to be 50 min. Finally, the variation in current-voltage (I-V) characteristics of Ga₂O³/p-Si heterojunctions are estimated to understand the effect UVO annealing on its electrical properties of RF sputtered Ga₂O³ thin film.

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Madhuri Mishra, Rajib Saha, Sangita Bhowmick, and Subhananda Chakrabarti "Impact of UV-ozone (UVO) treatment on optical and electrical properties of RF sputtered Ga₂O₃ thin films for opto-electronic application", Proc. SPIE 12653, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XX, 126530K (3 October 2023); https://doi.org/10.1117/12.2679102

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