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The FDTD numerical simulations are used to investigate the time evolution of the two-level system of conduction and valence bands. Free carriers’ population dynamics in the conduction band for large intensities of the ultrashort pulse (100 fs) is calculated. The results show that time-dependent real part of the optical permittivity at ENZ spectral point is saturated and resembles a step function as the ultrashort pulse amplitude reaches ~1010 V/m. The calculated value of the intensity-dependent refractive index is n2~-2×10-11 cm2/W. The results demonstrate that increasing initial carrier concentration from ~2×1020cm-3 to ~4×1020cm-3 leads to a significant n2 magnitude change.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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