Advanced chemically amplified resist

Hideki Takahashi; Kenichi Wakui; Daniel J.C. Herr; John S. Petersen; Theodore H. Fedynyshyn; Michael Francis Cronin

doi:10.1117/12.20166

1 May 1990 Advanced chemically amplified resist

Hideki Takahashi, Kenichi Wakui, Daniel J.C. Herr, John S. Petersen, Theodore H. Fedynyshyn, Michael Francis Cronin

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20166
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

This paper describes a set of empirical correlations between bulk resist properties and fine line iniaging quality in an Advanced Negative e-beam Resist (ANR) . At the on set of this study, it was not clear whether bulk properties, such as contrast, could be used to predict image quality. Consequently, several definitions of contrast have been examined and compared with imaged structures at four unique processes. These processes were selected based on the results of a modified Taguchi1 L9 experimental design. The slope of the line intersecting the thickness response curve at zero percent and ninety percent retention provides the best correlation with image quality. This bulk parameter is recommended as a suitable nionitor for sub-half micron e-beam ANR image quality in 2.38% TMAH.

Citation Download Citation

Hideki Takahashi, Kenichi Wakui, Daniel J.C. Herr, John S. Petersen, Theodore H. Fedynyshyn, and Michael Francis Cronin "Advanced chemically amplified resist", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20166

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