Are 2D transition metal dichalcogenides transistors the future silicon replacement or hype?

Kevin P. O'Brien

doi:10.1117/12.2669891

30 April 2023 Are 2D transition metal dichalcogenides transistors the future silicon replacement or hype?

Kevin P. O'Brien

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Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 1249802 (2023) https://doi.org/10.1117/12.2669891
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

We present the case for 2D transition metal dichalcogenides [TMD] replacing silicon transistors at ultra-scaled gate lengths. This new TMD 2D transistor technology has numerous clear advantages but experimentally there are still unsolved questions, therefore we will share both our current successes of high performance 2D transistors, as well as some of the current roadblocks. This talk includes a review of our progress in materials, contacts, gate stack and stacked gate all around 2D nanoribbons.

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Kevin P. O'Brien "Are 2D transition metal dichalcogenides transistors the future silicon replacement or hype?", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249802 (30 April 2023); https://doi.org/10.1117/12.2669891

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