Presentation + Paper
28 April 2023 Defining Tatian-Zernike polynomials for use in a lithography simulator
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Abstract
Next generation EUV scanners have been introduced with anamorphic, obscured multi-layer optics for operation at 0.55NA. Aberrations are of particular concern with high-NA EUVL, as the 13.5nm wavelength has returned wavefront phase errors to near I-line levels. With the central obscuration necessary so that additional lenses aren’t needed, the Zernike basis is no longer orthonormal, resulting in coefficient values which are dependent on the number of fitted terms. For an industry transition to a Fringe Tatian wavefront description to be successful, it is important to incorporate and carryover the intuitive understanding of the imaging effects of common aberrations. Using modifications to Prolith and Dr.LiTHO lithography simulators, this work defines a simulated lithography lens using the Fringe Tatian basis and includes simulations of common patterning conditions for next generation high-NA EUV nodes.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Ethan Maguire, Rajiv Sejpal, and Bruce W. Smith "Defining Tatian-Zernike polynomials for use in a lithography simulator", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940P (28 April 2023); https://doi.org/10.1117/12.2660861
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KEYWORDS
Wavefronts

Wavefront errors

Lenses

Lithography

Zernike polynomials

Singular value decomposition

Monochromatic aberrations

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