Next generation EUV scanners have been introduced with anamorphic, obscured multi-layer optics for operation at 0.55NA. Aberrations are of particular concern with high-NA EUVL, as the 13.5nm wavelength has returned wavefront phase errors to near I-line levels. With the central obscuration necessary so that additional lenses aren’t needed, the Zernike basis is no longer orthonormal, resulting in coefficient values which are dependent on the number of fitted terms. For an industry transition to a Fringe Tatian wavefront description to be successful, it is important to incorporate and carryover the intuitive understanding of the imaging effects of common aberrations. Using modifications to Prolith and Dr.LiTHO lithography simulators, this work defines a simulated lithography lens using the Fringe Tatian basis and includes simulations of common patterning conditions for next generation high-NA EUV nodes.
|