Paper
18 November 2022 Principle and preparation of gallium oxide photoelectric detection device
Haixin Zhang, Dayong Jiang, Mingyang Li, Jichao Han
Author Affiliations +
Proceedings Volume 12473, Second International Conference on Optics and Communication Technology (ICOCT 2022); 124730L (2022) https://doi.org/10.1117/12.2653535
Event: Second International Conference on Optics and Communication Technology (ICOCT 2022), 2022, Hefei, China
Abstract
The detection of ultraviolet signal has attracted more and more attention of researchers. Gallium oxide has attracted much attention because of its particularity. In this paper, the status quo of gallium oxide was investigated, and the working principle of gallium oxide photodetector was introduced in detail. A Ga2O3 MSM UV detector with different parameters was prepared by rf magnetron sputtering and wet etching, and the optimum growth parameters were obtained, which is well prepared for the subsequent research. When the bias voltage is constant, the photoelectric characteristics of the photodetector change with the parameters.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haixin Zhang, Dayong Jiang, Mingyang Li, and Jichao Han "Principle and preparation of gallium oxide photoelectric detection device", Proc. SPIE 12473, Second International Conference on Optics and Communication Technology (ICOCT 2022), 124730L (18 November 2022); https://doi.org/10.1117/12.2653535
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KEYWORDS
Gallium

Electrons

Oxides

Semiconductors

Photoelectric effect

Sputter deposition

Photoresistors

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