Presentation + Paper
15 March 2023 GaSb-based interband cascade lasers with advanced waveguides operating near 3.3 and 3.4 μm
Jeremy A. Massengale, Yixuan Shen, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos
Author Affiliations +
Abstract
We report the first implementation of an advanced waveguide structure, consisting of GaSb Separate Confinement Layers (SCLs), n-doped InAs/AlSb superlattice (SL) intermediate cladding layers, and n+ -doped InAs0.91Sb0.09 plasmon enhanced cladding layers for GaSb-based interband cascade lasers (ICLs) with lasing wavelengths at 3.3 and 3.4 µm. This advanced waveguide structure is intended to improve the optical confinement and the overall thermal conductivity of these ICLs. A room temperature (RT) threshold current density (Jth) as low as 176.9 A/cm2 for a Broad Area (BA) device emitting at 3.28 µm was measured with the pulsed operation extending up to 390 K. A second ICL emitting at 3.42 µm exhibited a RT pulsed Jth of 195.6 A/cm2 . The ICLs tested here had characteristic temperatures (To) of nearly 60 K, which is the highest among RT ICLs with similar lasing wavelengths, suggesting advantages of the advanced waveguide in these devices.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeremy A. Massengale, Yixuan Shen, Rui Q. Yang, Tetsuya D. Mishima, and Michael B. Santos "GaSb-based interband cascade lasers with advanced waveguides operating near 3.3 and 3.4 μm", Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 124400B (15 March 2023); https://doi.org/10.1117/12.2647213
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KEYWORDS
Waveguides

Cladding

External quantum efficiency

Continuous wave operation

Plasmons

Edge emitting semiconductor lasers

Group III-V semiconductors

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