Paper
15 March 2023 Probing performance limiting factors in uncooled quantum dots/graphene SWIR-MWIR detectors
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Abstract
Colloidal semiconductor quantum dots/graphene (QD/Gr) heterojunction nanohybrids have recently emerged as a promising candidate for broadband photodetection. The QD/Gr nanohybrids are quantum sensors that take advantages of the quantum confinement in QDs for spectral tunability and that in graphene for superior charge mobility, leading high photoconductive gains. Therefore, the QD/Gr nanohybrids allows design of broadband photodetectors and the intrinsic high gain could lead to high detectivity (D*). This presentation reports the result in a recent research on QD/Gr nanohybrids for short-wave to middle-wave infrared (SWIR-MWIR) detectors. The focus of the study is to identify key performance limiting factors on responsivity, D* and response speed through an understanding of the underlying physics. Specifically, we have investigated the origin of the noise in the QD/Gr and found the intrinsic quantum limit of the noise could be achieved by tuning the Fermi energy of the graphene. Furthermore, the charge transfer between QD and graphene, which impacts the responsivity and response speed, has been found to be dictated by the QD surface states and QD/Gr interface. Through development of atomic-scale surface and interface engineering approaches to reduce or eliminate charge traps, efficient charge transfer across the QD/Gr interface can be achieved, leading to high uncooled D* at SWIR-MWIR wavelengths at room temperature approaching that of the cooled counterparts. This result illustrates the QD/Gr nanohybrids could provide a promising low-cost, scalable scheme for uncooled infrared detection and imaging.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Judy Wu "Probing performance limiting factors in uncooled quantum dots/graphene SWIR-MWIR detectors", Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 124300F (15 March 2023); https://doi.org/10.1117/12.2648001
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KEYWORDS
Graphene

Photodetectors

Interfaces

Annealing

Chemical vapor deposition

Semiconductors

Light absorption

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