Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study

Bernd Witzigmann; Friedhard Römer

doi:10.1117/12.2652797

10 March 2023 Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study

Bernd Witzigmann, Friedhard Römer

Proceedings Volume 12415, Physics and Simulation of Optoelectronic Devices XXXI; 1241502 (2023) https://doi.org/10.1117/12.2652797
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Hexagonal III-nitride semiconductors exhibit internal polarization fields along their c-direction. In regions with graded mole fractions, the polarization gradient creates bound volume charge densities. Due to their electrostatic effect, they affect the balance of mobile charges, and can lead to polarization induced doping. In this contribution, drift-diffusion type simulations are employed in order to analyze a pn-junction based on polarization induced charges, and an analytical formula for calculating the bound charge density is given.

Conference Presentation

Citation Download Citation

Bernd Witzigmann and Friedhard Römer "Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study", Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241502 (10 March 2023); https://doi.org/10.1117/12.2652797

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