Excimer laser doping for the fabrication of 4H-SiC power devices

Yoshiaki Kakimoto; Keita Katayama; Takuma Yasunami; Tetsuya Goto; Daisuke Nakamura; Hiroshi Ikenoue

doi:10.1117/12.2651419

17 March 2023 Excimer laser doping for the fabrication of 4H-SiC power devices

Yoshiaki Kakimoto, Keita Katayama, Takuma Yasunami, Tetsuya Goto, Daisuke Nakamura, Hiroshi Ikenoue

Proceedings Volume 12408, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII; 124080M (2023) https://doi.org/10.1117/12.2651419
Event: SPIE LASE, 2023, San Francisco, California, United States

Conference Poster

Abstract

4H–Silicon carbide (4H-SiC), which is a wide-bandgap semiconductor, is a promising material for high-power, ecofriendly devices owing to its excellent material properties. For the fabrication of SiC power devices, low-resistance ohmic contact must be established at the metal–semiconductor interface, which requires high-concentration impurity doping. In this study, we successfully doped 4H-SiC with high-concentration nitrogen under excimer laser irradiation using SiNx films containing dopants on 4H-SiC. Results indicated that a contact resistance of 10−6 Ωcm2 was obtained. The effects of doping characteristics due to different laser parameters were also investigated.

Citation Download Citation

Yoshiaki Kakimoto, Keita Katayama, Takuma Yasunami, Tetsuya Goto, Daisuke Nakamura, and Hiroshi Ikenoue "Excimer laser doping for the fabrication of 4H-SiC power devices", Proc. SPIE 12408, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII, 124080M (17 March 2023); https://doi.org/10.1117/12.2651419

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