Design of a matched power amplifier in 3.7-4.2GHz

Fan Li; Hongxi Yu; Xiaoxiao Li

doi:10.1117/12.2653107

10 November 2022 Design of a matched power amplifier in 3.7-4.2GHz

Fan Li, Hongxi Yu, Xiaoxiao Li

Proceedings Volume 12331, International Conference on Mechanisms and Robotics (ICMAR 2022); 123310V (2022) https://doi.org/10.1117/12.2653107
Event: International Conference on Mechanisms and Robotics (ICMAR 2022), 2022, Zhuhai, China

Abstract

For the requirements of high efficiency of communications satellite on solid state power amplifier in the broadband. In this paper, a power amplifier works in 3.7-4.2GHz using gallium nitride (GaN) based high electron mobility transistor (HEMT) for satellite application was presented. The test results show that in the 3. 7-4. 2 GHz frequency range, under the conditions of the drain voltage of 28 V, the gate voltage of -2.8 V and continuous wave, the saturated output power and drain efficiency of the designed amplifier in this paper are above 40.02 dBm and 59.6% respectively.

Citation Download Citation

Fan Li, Hongxi Yu, and Xiaoxiao Li "Design of a matched power amplifier in 3.7-4.2GHz", Proc. SPIE 12331, International Conference on Mechanisms and Robotics (ICMAR 2022), 123310V (10 November 2022); https://doi.org/10.1117/12.2653107

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available