Poster + Paper
16 December 2022 2μm-compatible avalanche photodetector using Sb-based superlattice
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Conference Poster
Abstract
In this work, we report a separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~2.1 μm at 300 K grown by molecular beam epitaxy. The electron-dominated avalanche mechanism multiplication region was designed as a multi-quantum well structure consisting of AlAsSb/GaSb H-structure superlattice and Al0.3In0.7AsSb digital alloy. At room temperature, the device exhibits a maximum multiplication gain of 79 under -13.3 bias voltage.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenguang Zhou, Junkai Jiang, Nong Li, Faran Chang, Guowei Wang, Yingqiang Xu, Donghai Wu, Dongwei Jiang, Hongyue Hao, Weiqiang Chen, Suning Cui, Xueyue Xu, and Zhichuan Niu "2μm-compatible avalanche photodetector using Sb-based superlattice", Proc. SPIE 12324, Infrared, Millimeter-Wave, and Terahertz Technologies IX, 1232413 (16 December 2022); https://doi.org/10.1117/12.2644100
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KEYWORDS
Avalanche photodetectors

Aluminum

Superlattices

Absorption

Ionization

Laser sintering

Sensors

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