Simulation of organic light-emitting diodes with CdS as buffer layer

Yiran Liu

doi:10.1117/12.2628654

16 February 2022 Simulation of organic light-emitting diodes with CdS as buffer layer

Yiran Liu

Proceedings Volume 12164, International Conference on Optoelectronic Materials and Devices (ICOMD 2021); 121641P (2022) https://doi.org/10.1117/12.2628654
Event: 2021 International Conference on Optoelectronic Materials and Devices, 2021, Guangzhou, China

Abstract

In this work we report a detailed analysis of the current & charge density-voltage variance from tris(8-hydroxyquinoline) aluminum based organic light emitting diodes using general-purpose photovoltaic device model (GPVDM) software as a function of the thickness of CdS as the buffer layer. The electrical and optical parameters of all layers were extracted from the material directory available in GPVDM. The calculations fully consider dispersion in glass substrate, indium tin oxide anode, the organic layers as well as the dispersion in the metal cathode. As expected, applied voltage was strongly dependent on the thickness of the buffer layer inside the devices. Finally, guidelines for designing devices with optimum turn-on voltage and thickness are presented.

Citation Download Citation

Yiran Liu "Simulation of organic light-emitting diodes with CdS as buffer layer", Proc. SPIE 12164, International Conference on Optoelectronic Materials and Devices (ICOMD 2021), 121641P (16 February 2022); https://doi.org/10.1117/12.2628654

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