Presentation + Paper
31 May 2022 THz metrology with monolithic tunable two-color diode lasers
Author Affiliations +
Abstract
We use a slotted Y-branch Laser for Terahertz thickness measurements of high resistive float zone silicon wafers of different thicknesses. The laser provides two-color emission in the 1550 nm region with an optical beat frequency of 1 THz. It is used as a photonic source for thickness measurements of high resistive silicon wafers with continuous wave Terahertz radiation. Frequency tuning is obtained through segment current tuning of the individual branches. We determine the sample´s refractive index and thickness by MSE fitting of the theoretical etalon transmission to the experimental results without additional knowledge.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin R. Hofmann, Nils Surkamp, Alexandra Gerling, James O'Gorman, Martin Honsberg, Sebastian Schmidtmann, Uttam Nandi, Sascha Preu, Joachim Sacher, and Carsten Brenner "THz metrology with monolithic tunable two-color diode lasers", Proc. SPIE 12134, Terahertz Photonics II, 1213408 (31 May 2022); https://doi.org/10.1117/12.2626219
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KEYWORDS
Terahertz radiation

Semiconducting wafers

Principal component analysis

Semiconductor lasers

Refractive index

Silicon

Receivers

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