Performance of CdTe-based p-n junction-diode X/γ-ray detectors

Volodymyr Gnatyuk; Serhii Levytskyi; Olena Maslyanchuk; Oleksandr Kulyk; Toru Aoki

doi:10.1117/12.2615569

20 December 2021 Performance of CdTe-based p-n junction-diode X/γ-ray detectors

Volodymyr Gnatyuk, Serhii Levytskyi, Olena Maslyanchuk, Oleksandr Kulyk, Toru Aoki

Proceedings Volume 12126, Fifteenth International Conference on Correlation Optics; 1212614 (2021) https://doi.org/10.1117/12.2615569
Event: Fifteenth International Conference on Correlation Optics, 2021, Chernivtsi, Ukraine

Abstract

The electrical and spectroscopic properties of the CdTe-based p-n junction-diode X/γ-ray detectors have been studied by the measurements of I-V characteristics and emission spectra of ¹³⁷Cs, ⁵⁷Co, and ²⁴¹Am radioisotopes. The In/CdTe/Au diodes were fabricated by the frontside laser irradiation doping technique. Detector-grade p-like CdTe(111) crystals, pre-coated with an In dopant (electrode) film, were irradiated with nanosecond KrF laser pulses in distilled water. Laser stimulated solid-phase doping was attributed to generation and propagation of stress and shock waves, barodiffusion of In dopant atoms into the thin CdTe surface region and thus, creation of high concentration donors. The second contact (quasi-ohmic) was formed on the opposite (Cd-terminated) crystal side by vacuum evaporation of Au. In addition, some diodes were created on CdTe crystals, which were preliminary annealed in vacuum prior to deposition of metal films. The I-V characteristics of the In/CdTe/Au p-n junction diodes evidenced that the reverse dark current in the initial part was described by the Sah-Noyce-Shockley theory. Creation of the favorable conditions for efficient collection of photogenerated charge carriers, decrease in the reverse dark current in the In/CdTe/Au detectors ensured obtaining the high-energy resolution spectra. Based on the electric field dependence of the ¹³⁷Cs isotope spectrum, it was established that the applied bias V = 800 V was the optimal for the diodes formed on preliminary annealed CdTe crystals which ensured the energy resolution FWHM = 0.62 % at the 662 keV line

Citation Download Citation

Volodymyr Gnatyuk, Serhii Levytskyi, Olena Maslyanchuk, Oleksandr Kulyk, and Toru Aoki "Performance of CdTe-based p-n junction-diode X/γ-ray detectors", Proc. SPIE 12126, Fifteenth International Conference on Correlation Optics, 1212614 (20 December 2021); https://doi.org/10.1117/12.2615569

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Sensors

Crystals

Doping

Laser crystals

Diodes

Semiconductor lasers

Semiconductors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years