Design of III-V submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates

Zhengxia Yang; Wenyu Yang; Mengqi Wang; Xuliang Zhou; Hongyan Yu; Yejin Zhang; Jiaoqing Pan

doi:10.1117/12.2601084

9 October 2021 Design of III-V submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates

Zhengxia Yang, Wenyu Yang, Mengqi Wang, Xuliang Zhou, Hongyan Yu, Yejin Zhang, Jiaoqing Pan

Author Affiliations +

Proceedings Volume 11890, Advanced Lasers, High-Power Lasers, and Applications XII; 118900E (2021) https://doi.org/10.1117/12.2601084
Event: SPIE/COS Photonics Asia, 2021, Nantong, JS, China

Abstract

For constructing functional photonic integrated circuits, it is expected to incorporate an efficient and compact laser source into the complementary metal-oxide-semiconductor platform. Monolithic integration of III-V submicron lasers on patterned SOI substrates by means of the aspect ratio trapping method is a promising solution. Here, we have designed submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates by three dimensional finite difference time domain simulation, effectively confining the light into the submicron lasers without removing the top Si layer. The reversed ridge waveguide structure can be formed by extending the III-V materials out of the SiO₂ trench. The high-quality InP reversed ridge waveguide epitaxial structures have been obtained. The results of the simulations show that the optical leakage loss is reduced to the order of 10^-2. This provides a new approach to develop the silicon-based submicron lasers emitting at the telecom bands.

Citation Download Citation

Zhengxia Yang, Wenyu Yang, Mengqi Wang, Xuliang Zhou, Hongyan Yu, Yejin Zhang, and Jiaoqing Pan "Design of III-V submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates", Proc. SPIE 11890, Advanced Lasers, High-Power Lasers, and Applications XII, 118900E (9 October 2021); https://doi.org/10.1117/12.2601084

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