Presentation
12 September 2021 Optical characterization of phase-change materials for reconfigurable devices: GaS, Ga2S3 and MoOx: their plasmonics and beyond
Author Affiliations +
Abstract
From plasmonics with pure coinage metallic materials to the current advances in phase-change materials (PCM), research in nanophotonics has rapidly evolved, pushed by its wide gamut of applications. In this contribution, we will present three phase-change material examples: MoOx, Ga2S3 and GaS as promising candidates for reconfigurable plasmonic applications with fast and low-loss response. The first because modification of its oxygen stoichiometry (2< ×<3) induce a phase change in the VIS region, suitable for developing reflective pixels for display applications. The other two, because they show phase transitions due to changes in their lattice configurations, making them attractive for new broadband devices for switching and photodetection applications. They will be characterized and studied by resorting to exact DFT calculations. Also, their plasmonic response as well as their possible plasmonic coupling effects will be analyzed by considering the different envisaged applications.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fernando Moreno, Yael Gutierrez Vela, Gonzalo Santos, Pablo García-Fernández, Javier Junquera, Mircea Modreanu, José M. Saiz, Dolores Ortiz, Francisco González, and Maria Losurdo "Optical characterization of phase-change materials for reconfigurable devices: GaS, Ga2S3 and MoOx: their plasmonics and beyond", Proc. SPIE 11872, Advances in Optical Thin Films VII, 118720B (12 September 2021); https://doi.org/10.1117/12.2596836
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KEYWORDS
Plasmonics

Metals

Chalcogenides

Electromagnetism

Plasmons

Selenium

Switching

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