In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy

Toshinari Ichihashi; Shinji Matsui

doi:10.1117/12.963928

5 February 1990 In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy

Toshinari Ichihashi, Shinji Matsui

Author Affiliations +

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963928
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Electron beam induced chemical vapor deposition of W and Si has been studied in a transmission electron microscope. WF6 and SiH2C12 were used as gas sources. Si and W clusters were initially formed. The W clusters, about 3nm in size, were β-W crystal, while the Si clusters were amorphous. The larger W clusters deposited on carbon films, about 10nm in size, were δ-W crystal. Deposition rates can be directly calcula,ted, by using this techniques. For example, a 120-kV electron beam at 100A/cm2 current density will deposit W at 5nm/min at 5x10^-7Torr, and Si at 2nm/min at 5x10^-5Torr. A W rod, 15nm in diameter, has been deposited using a 3-nm-dim focused electron beam.

Citation Download Citation

Toshinari Ichihashi and Shinji Matsui "In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963928

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