Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure

V. Balaniuk; V. Krasnov; N. Kul'chitzkii; S. Musher; V. Proc'; A. Rubenchik; V. Ryabchenko; M. Stupak; S. Strutz; V. Khryapov

doi:10.1117/12.963932

5 February 1990 Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure

V. Balaniuk, V. Krasnov, N. Kul'chitzkii, S. Musher, V. Proc', A. Rubenchik, V. Ryabchenko, M. Stupak, S. Strutz, V. Khryapov

Author Affiliations +

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963932
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

In the process of the molecular beam epitaxy (MBE) the electron diffraction is traditionally used for nondestructive crystal-structure monitoring. We have shown that similar results could be obtained by detection of the second harmonic of the laser light generated in a film (SHG-method). Laser-assisted methods are very attractive for diagnostics in high-vacuum systems. It is easy to input and to output radiation via small diameter windows. It is also easy to realize distant continuous local monitoring during the growth process.

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V. Balaniuk, V. Krasnov, N. Kul'chitzkii, S. Musher, V. Proc', A. Rubenchik, V. Ryabchenko, M. Stupak, S. Strutz, and V. Khryapov "Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963932

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