The origin of low contact resistance in monolayer organic field-effect-transistors

Paddy K. L. Chan

doi:10.1117/12.2597216

1 August 2021 The origin of low contact resistance in monolayer organic field-effect-transistors

Paddy K. L. Chan

Author Affiliations +

Proceedings Volume 11811, Organic and Hybrid Field-Effect Transistors XX; 118110G (2021) https://doi.org/10.1117/12.2597216
Event: SPIE Organic Photonics + Electronics, 2021, San Diego, California, United States

Abstract

In this talk, I will focus on the meniscus guided coating (MGC) method for the OFET fabrications. We will demonstrate and elucidate why the organic monolayer OFETs developed by MGC would show outstanding contact resistance values under staggered structure especially during low source-drain bias (VDS) operations. The device under study is 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) monolayer with the van der Waals integration of metal electrodes. I will deviate the access resistance component and interface resistance component of the contact resistance. We noticed access resistance of organic semiconductor is extracted under -1 mV drain-source bias, while the Schottky diode at the metal-organic interface is negligible. On the other hand, the diode effect at the metal-organic interface can be amplified by increasing the VDS level and eventually dominates the device performance.

Conference Presentation

Citation Download Citation

Paddy K. L. Chan "The origin of low contact resistance in monolayer organic field-effect-transistors", Proc. SPIE 11811, Organic and Hybrid Field-Effect Transistors XX, 118110G (1 August 2021); https://doi.org/10.1117/12.2597216

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