Presentation + Paper
4 August 2021 Organic field effect transistors with bulk low doping
Author Affiliations +
Abstract
Organic Field Effect Transistors (OFETs), while showing a lot of promise, currently suffer from a number of limitations. Organic doping can help to overcome these limitations. It opens up a number of new possibilities by offering a way to define majority charge carriers, control the charge carrier density, threshold voltage etc. precisely and produce devices with better performance, stability, and reproducibility. The doping techniques explored in OFETs thus far have been in the range of a few wt.%, which has limited the use of doping to contact doping or a thin doped layer at the gate dielectric interface. Furthermore, the high doping concentrations used place serious limitations on the doping efficiency that can be achieved. Here we demonstrate the successful use of low doping in the 100ppm range throughout the bulk of the organic semiconductor layer of an OFET with the use of a rotating shutter.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raj Kishen Radha Krishnan, Shiyi Liu, Drona Dahal, Pushpa Raj Paudel, and Björn Lüssem "Organic field effect transistors with bulk low doping", Proc. SPIE 11811, Organic and Hybrid Field-Effect Transistors XX, 1181109 (4 August 2021); https://doi.org/10.1117/12.2594721
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KEYWORDS
Doping

Field effect transistors

Aluminum

Camera shutters

Dielectrics

Resistance

Electrodes

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