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12 April 2021 Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy Jr.
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Proceedings Volume 11742, Radar Sensor Technology XXV; 117420W (2021) https://doi.org/10.1117/12.2588499
Event: SPIE Defense + Commercial Sensing, 2021, Online Only
Abstract
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We report a Ga2O3 transistor device based on a high-GR MOCVD technology (Agnitron Technology’s Agilis 100 reactor). We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD resulting in significantly improved epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer.
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Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, and Charles Eddy Jr. "Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates", Proc. SPIE 11742, Radar Sensor Technology XXV, 117420W (12 April 2021); https://doi.org/10.1117/12.2588499
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KEYWORDS
Metalorganic chemical vapor deposition
Field effect transistors
Scattering
Silicon carbide
Transistors
Resistance
Roads
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