Progress in in-situ metrology for epitaxy of LEDs and laser-structures

Kolja Haberland

doi:10.1117/12.2575979

5 March 2021 Progress in in-situ metrology for epitaxy of LEDs and laser-structures

Kolja Haberland

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 1170610 (2021) https://doi.org/10.1117/12.2575979
Event: SPIE OPTO, 2021, Online Only

Abstract

Optical semiconductor devices such as light emitting diodes (LED) and semiconductor lasers are widely used today in a constantly growing variety of applications. Epitaxial growth by MOCVD is one of the first and even most complex manufacturing step in the production of these devices. Tightening industry requirements in terms of cost reduction and yield improvement have led to an increased usage of in-situ metrology for advanced process control in MOCVD. Consequently, optical in-situ metrology has become an integral part of process control in the production of optical semiconductor devices. In this talk we will present recent improvements of the optical in-situ metrology equipment. This will include real wafer temperature measurements, UV-based reflectometry and full spectroscopic reflectance measurements, which are perfectly suited for studying complex heterostructures. We will also show examples for close-loop control concepts that provide direct benefit to manufacturing.

Conference Presentation

Citation Download Citation

Kolja Haberland "Progress in in-situ metrology for epitaxy of LEDs and laser-structures", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 1170610 (5 March 2021); https://doi.org/10.1117/12.2575979

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