Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction

Amélie Dussaigne

doi:10.1117/12.2578272

5 March 2021 Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction

Amélie Dussaigne

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060D (2021) https://doi.org/10.1117/12.2578272
Event: SPIE OPTO, 2021, Online Only

Abstract

Micro-displays with pixel pitch smaller than 10 µm are required for augmented reality. The three primary colors can then be achieved with the same material: the InxGa1-xN alloy. However, when strained on GaN, its InN mole fraction x is limited to 25%. By using a full InGaN structure grown on a relaxed InGaN pseudo-substrate, such as the InGaNOS substrate from Soitec, the In incorporation rate is enhanced. An internal quantum efficiency higher than 10% at 640 nm an In content higher than 25% in InxGa1-xN/InyGa1-yN quantum wells will be shown. 10x10 µm² red micro-light emitting diodes will be also presented.

Conference Presentation

Citation Download Citation

Amélie Dussaigne "Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060D (5 March 2021); https://doi.org/10.1117/12.2578272

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