Presentation + Paper
5 March 2021 Nano-sized rod array for semiconductor light sources
Je Won Kim
Author Affiliations +
Abstract
The light-emitting layer was formed on the side of the nano-sized rod that had been formed by the nanomold process, and the InGaN/GaN MQWs and barrier layers were also fabricated. Through the design and growth of such an emission structure, it was possible to form a light-emitting layer on the side of the nano-sized rod. The change of the light emission wavelength was measured for each pitch of the nano-sized rods. A change of the emission wavelength with the pitch of the nano-sized rods suggests that two or more emission wavelengths can be realized in a single device. This wavelength variability, based on the arrangement of the nano-sized rods, shows that a white LED can be fabricated that does not require phosphor material to be applied. Based on these results, the semiconductor light source using a nanosized rod structure can be applied to various fields, such as flat or flexible displays and smart lighting.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Je Won Kim "Nano-sized rod array for semiconductor light sources", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 1170605 (5 March 2021); https://doi.org/10.1117/12.2583380
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KEYWORDS
Etching

Silicon

Oxides

Light sources

Semiconductors

Nanolithography

Light emitting diodes

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