Experimental investigation on selenium ion-implanted gallium oxide

Xiaoli Liu; Hubert K. Bilan; Chee-Keong Tan

doi:10.1117/12.2578901

6 March 2021 Experimental investigation on selenium ion-implanted gallium oxide

Xiaoli Liu, Hubert K. Bilan, Chee-Keong Tan

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168728 (2021) https://doi.org/10.1117/12.2578901
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

Material characterizations were carried out to investigate the optical properties and surface morphology of Ga2O3:Se wafer obtained through ion implantation. Se concentration in Ga2O3 varies by adjusting the implant dosage up to 1⨉10^16 ions/cm2. The scanning electron microscopy (SEM) and atomic force microscope (AFM) were conducted to reveal the surface morphology, which shows the surface quality of the samples is likely to be improved with Se-implantation. Optical absorption measurement was also carried out to determine the effect of Se on the properties of Ga2O3. The results indicate the potential use of Ga2O3:Se in ultraviolet photodetector or electronic device applications.

Conference Presentation

Citation Download Citation

Xiaoli Liu, Hubert K. Bilan, and Chee-Keong Tan "Experimental investigation on selenium ion-implanted gallium oxide", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168728 (6 March 2021); https://doi.org/10.1117/12.2578901

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